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NDD03N50Z
N-Channel Power MOSFET
500 V, 3.3 W
Features
? Low ON Resistance
? Low Gate Charge
? ESD Diode ? Protected Gate
? 100% Avalanche Tested
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
V DSS
500 V
http://onsemi.com
R DS(on) (MAX) @ 1.15 A
3.3 W
Rating
Drain ? to ? Source Voltage
Continuous Drain Current R q JC
Continuous Drain Current
R q JC , T A = 100 ° C
Pulsed Drain Current, V GS @ 10 V
Power Dissipation R q JC
Gate ? to ? Source Voltage
Single Pulse Avalanche Energy,
I D = 2.6 A
ESD (HBM) (JESD22 ? A114)
Peak Diode Recovery
Symbol
V DSS
I D
I D
I DM
P D
V GS
E AS
V esd
dv/dt
Value
500
2.6
1.7
10
58
± 30
120
2000
4.5 (Note 1)
Unit
V
A
A
A
W
V
mJ
V
V/ns
G (1)
N ? Channel
D (2)
4
S (3)
4
3
Continuous Source Current
(Body Diode)
Maximum Temperature for Soldering
Leads
Operating Junction and
Storage Temperature Range
I S
T L
T J , T stg
2.6
260
? 55 to 150
A
° C
° C
1
2
IPAK
CASE 369D
STYLE 2
1 2
3
DPAK
CASE 369AA
STYLE 2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. I D v 2.6 A, di/dt ≤ 200 A/ m s, V DD ≤ BV DSS , T J ≤ 150 ° C.
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
September, 2011 ? Rev. 1
1
Publication Order Number:
NDD03N50Z/D
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